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TF202FC
No.A1343-1/3
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer's
products or equipment.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for applications outside the standard
applications of our customer who is considering such use and/or outside the scope of our intended standard
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the
intended use, our customer shall be solely responsible for the use.
Features
•
Ultrasmall package facilitates miniaturization in end products.
•
Especially suited for use in electret condenser microphone for audio equipments and telephones.
•
Excellent voltage characteristics.
•
Excellent transient characteristics.
•
Adoption of FBET process.
•
Halogen free compliance.
Specifi cations
Absolute Maximum Ratings
at Ta=25
°
C
Parameter Symbol Conditions Ratings Unit
Gate-to-Drain Voltage V
GDO
--20 V
Gate Current I
G
10 mA
Drain Current I
D
1mA
Allowable Power Dissipation P
D
100 mW
Junction Temperature Tj 150
°
C
Storage Temperature Tstg --55 to +150
°
C
Electrical Characteristics
at Ta=25
°
C
Parameter Symbol Conditions
Ratings
Unit
min typ max
Gate-to-Drain Breakdown Voltage V
(BR)GDO
I
G
=--100
μ
A --20 V
Cutoff Voltage V
GS
(off) V
DS
=5V, I
D
=1
μ
A --0.2 --0.6 --1.0 V
Marking : E Continued on next page.
Ordering number : ENA1343
O2208GB MS IM TC-00001090
SANYO Semiconductors
DATA SHEET
TF202FC
N-channel Silicon Juncton FET
Electret Condenser Microphone
Applications
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