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Philips Semiconductors Product specification
SA70161.3GHz low voltage fractional-N synthesizer
1999 Nov 04
4
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER MIN. MAX. UNIT
V
DD
Digital supply voltage –0.3 +5.5 V
V
DDCP
Analog supply voltage –0.3 +5.5 V
∆V
DDCP
–V
DD
Difference in voltage between V
DDCP
and
V
DD
(V
DDCP
≥ V
DD
) –0.3 +2.8 V
V
n
Voltage at pins 1, 2, 5, 6, 11 to 16 –0.3 V
DD
+ 0.3 V
V
1
Voltage at pin 8, 9 –0.3 V
DDCP
+ 0.3 V
∆V
GND
Difference in voltage between GND
CP
and GND (these pins should
be connected together)
–0.3 +0.3 V
T
stg
Storage temperature –55 +125
_C
T
amb
Operating ambient temperature –40 +85
_C
T
j
Maximum junction temperature 150
_C
Handling
Inputs and outputs are protected against electrostatic discharge in
normal handling. However, to be totally safe, it is desirable to take
normal precautions appropriate to handling MOS devices.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
th
j–a
Thermal resistance from junction to ambient in free air 120 K/W