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ELECTRICAL DATA S3C2410A
24-2
D.C. ELECTRICAL CHARACTERISTICS
Table 24-3 and 24-4 define the DC electrical characteristics for the standard LVCMOS I/O buffers.
Table 24-3. Normal I/O PAD DC Electrical Characteristics
(V
DD
= 3.3V ± 0.3V, T
A
= -40 to 85 °C)
Symbol Parameters Condition Min Type Max Unit
V
IH
High level input voltage
LVCMOS interface 2.0 V
V
IL
Low level input voltage
LVCMOS interface 0.8 V
VT Switching threshold 1.4 V
VT+ Schmitt trigger, positive-going threshold CMOS 2.0 V
VT- Schmitt trigger, negative-going threshold CMOS 0.8 V
I
IH
High level input current
Input buffer V
IN
= V
DD
-10 10
µ
A
I
IL
Low level input current
Input buffer V
IN
= V
SS
-10 10
µ
A
Input buffer with pull-up -60 -33 -10
V
OH
High level output voltage
Type B6 I
OH
= - 6 mA
Type B8 I
OH
= - 8 mA 2.4 V
Type B12 I
OH
= -12 mA
V
OL
Low level output voltage
Type B6 I
OL
= 6 mA
Type B8 I
OL
= 8 mA 0.4 V
Type B12 I
OL
= 12 mA
NOTES:
1. Type B6 means 6mA output driver cell.
2. Type B8 means 8mA output driver cell.
3. Type B12 means 12mA output driver cells.